High Performance Ultrawide Temperature Range Planar Hall Devices by 2D Hidden-Rashba Systems.

Area of Science:

• Condensed Matter Physics
• Materials Science
• Spintronics

Background:

• Lattice symmetry influences spin-orbit coupling (SOC) effects in crystals.
• Hidden-spin Rashba systems often have concealed spin polarizations due to sublattice inversion symmetry, limiting spintronic applications.
• Negligible spin lifetimes in conventional systems hinder practical device development.

Purpose of the Study:

• To report high-performance planar Hall effect (PHE) devices based on van der Waals 1T-PtSe2 thin films.
• To investigate the quantum signature of hidden-Rashba PHE and its unique properties.
• To demonstrate the potential of 2D hidden-spin Rashba systems for advanced spintronic applications.

Main Methods:

• Fabrication of van der Waals 1T-PtSe2 thin film devices.
• Temperature- and layer-dependent magneto-transport measurements.
• Analysis of quantum signatures and device performance characteristics.

Main Results:

• Unveiled the quantum signature of hidden-Rashba PHE in 1T-PtSe2, exhibiting suppressed backscattering.
• Observed an opposite sign for the hidden-Rashba PHE compared to conventional Rashba-rooted PHE signals.
• Demonstrated high-performance magnetic device operation from 0.3 K to room temperature (RT) with ultralow heat load and superior RT signal-to-noise ratio (>18,000).

Conclusions:

• 1T-PtSe2 thin films with hidden-Rashba spins enable high-performance PHE devices.
• Optimized device structures and defect elimination significantly improve device sensitivity, surpassing commercial Hall sensors.
• 2D hidden-spin Rashba systems represent a promising platform for practical spintronics.