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High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy
Published on: June 28, 2016
Hailing Jiang1, Tao Wang1,2, Zhenyu Zhang1
1State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China.
Dislocations in III-nitride semiconductors disrupt heat flow, causing overheating. This study reveals how atomic-level defects and strain fields around dislocations scatter phonons, impacting thermal transport in GaN materials.
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