Atomic Layer Deposition of Superconductive Niobium Carbonitride Thin Films

Transition metal carbonitrides (TMCN) are stable materials with excellent catalytic and superconductive properties. Atomic layer deposition (ALD) stands out as the optimal method for the fabrication of these materials, enabling their use in future applications. In this study, we deposit ALD NbC _x N _y films at 250-450 °C with NbF₅ and 1,4-bis-(trimethylsilyl)-1,4-dihydropyrazine on Si, Ru, TiN, and soda lime glass. We analyze the film growth characteristics, composition, and phase. The films show substrate-enhanced growth on Si with a growth per cycle (GPC) of 1.3 Å. Additionally, the films were superconductive as-deposited and had a superconducting critical temperature (T _c ) of 14.5 K after annealing at 950 °C. This work expands the range of TMCNs deposited by ALD and demonstrates the applicability of ALD for thin film materials with a high T _c .