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Related Experiment Video

Updated: Jan 17, 2026

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
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Ferroelastic Domain-Induced Electronic Modulation in Halide Perovskites.

Ganesh Narasimha1, Maryam Bari2, Benjamin J Lawrie1,3

  • 1Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.

ACS Applied Materials & Interfaces
|September 15, 2025
PubMed
Summary
This summary is machine-generated.

Ferroelastic domain walls in cesium lead bromide perovskites improve optoelectronic performance. Electron-phonon coupling at these walls enhances charge separation and carrier dynamics in these promising materials.

Keywords:
cathodoluminescencedomain wallselectron−phonon couplingferroelastichalide perovskites

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Area of Science:

  • Materials Science
  • Solid-State Physics
  • Optoelectronics

Background:

  • Lead halide perovskites, particularly CsPbBr3, show promise for optoelectronic devices.
  • Ferroelastic domains in CsPbBr3 enhance transport and emission, but mechanisms are unclear.

Purpose of the Study:

  • Investigate carrier dynamics at ferroelastic domain walls in CsPbBr3 single crystals.
  • Elucidate the role of domain walls in the optoelectronic properties of CsPbBr3.

Main Methods:

  • Cathodoluminescence (CL) spectroscopy to analyze emission properties.
  • Micro-Raman spectroscopy for spatially resolved vibrational mode mapping.

Main Results:

  • CL imaging showed reduced emission and redshift at domain walls.
  • Micro-Raman revealed second-order phonon modes localized at domain boundaries.
  • Evidence of strong electron-phonon coupling at twin domain walls.

Conclusions:

  • Electron-phonon coupling at domain walls is crucial for charge separation.
  • These findings explain enhanced optoelectronic performance in CsPbBr3.
  • Domain walls are key to optimizing perovskite optoelectronics.