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Updated: Jan 17, 2026
08:12
Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
Published on: September 8, 2017
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Ferroelastic Domain-Induced Electronic Modulation in Halide Perovskites
Ganesh Narasimha1, Maryam Bari2, Benjamin J Lawrie1,3
1Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.
ACS Applied Materials & Interfaces
|September 15, 2025
Summary
Ferroelastic domain walls in cesium lead bromide perovskites improve optoelectronic performance. Electron-phonon coupling at these walls enhances charge separation and carrier dynamics in these promising materials.
Area of Science:
- Materials Science
- Solid-State Physics
- Optoelectronics
Background:
- Lead halide perovskites, particularly CsPbBr3, show promise for optoelectronic devices.
- Ferroelastic domains in CsPbBr3 enhance transport and emission, but mechanisms are unclear.
Purpose of the Study:
- Investigate carrier dynamics at ferroelastic domain walls in CsPbBr3 single crystals.
- Elucidate the role of domain walls in the optoelectronic properties of CsPbBr3.
Main Methods:
- Cathodoluminescence (CL) spectroscopy to analyze emission properties.
- Micro-Raman spectroscopy for spatially resolved vibrational mode mapping.
Main Results:
- CL imaging showed reduced emission and redshift at domain walls.
- Micro-Raman revealed second-order phonon modes localized at domain boundaries.
- Evidence of strong electron-phonon coupling at twin domain walls.
Conclusions:
- Electron-phonon coupling at domain walls is crucial for charge separation.
- These findings explain enhanced optoelectronic performance in CsPbBr3.
- Domain walls are key to optimizing perovskite optoelectronics.
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