Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Bipolar Junction Transistor

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...

Diode: Forward bias

Diode: Forward bias

In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...

Cut-off Frequency of BJT

Cut-off Frequency of BJT

Cut-off frequencies in Bipolar Junction Transistors (BJTs) mark the transition between the signal's pass band and stop band, influencing their performance in amplifying or attenuating frequencies. These frequencies are crucial for designing BJTs to meet specific operational requirements in electronic circuits.
Alpha Cut-Off Frequency: Pertinent to the common-base configuration, the alpha cut-off frequency defines the upper-frequency limit at which the current gain, alpha, remains stable. As...

Schottky Barrier Diode

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

Diode: Reverse bias

Diode: Reverse bias

A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...

Biasing of P-N Junction

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Quantum Light Emission from GaAs<sub><i>x</i></sub>P<sub>1-<i>x</i></sub> Quantum Dots in Wurtzite GaP Nanowires.

ACS applied materials & interfaces·2026

Same author

Deposition of Sm-Co Coatings by Chronoamperometric Method.

Materials (Basel, Switzerland)·2026

Same author

Synthesis and Structural Evolution of AgCuCoNiFe High-Entropy Alloy via a Precipitation-Reduction Route.

Materials (Basel, Switzerland)·2026

Same author

Influence of the Inclination Angle of 3D-Printed Inconel Alloy 718 on Its Corrosion Resistance.

Materials (Basel, Switzerland)·2026

Same author

Coherent microwave comb generation via the Josephson effect.

Nature communications·2026

Same author

Growth and transport properties of InAsSb nanoflags.

Nanoscale·2026

Same journal

Correction to "Living Therapeutic Microneedles Integrated with Built-In Metabolic Engines for Autonomous Diabetic Wound Management".

Nano letters·2026

Same journal

Chiral Quasi-Bound States in the Continuum on the Verge of the Light Cone.

Nano letters·2026

Same journal

Scalable Atomically Interfaced Heterostructure Photoelectrodes for Broadband Solar Energy Harvesting and Stable Li-Ion Storage.

Nano letters·2026

Same journal

Bulk and Surface Excitons in the van der Waals Magnet CrSBr: Magneto-Optical Studies to 55 T.

Nano letters·2026

Same journal

High-Entropy Alloy Nanomaterials with Well-Designed Nanostructures for Electrocatalytic Applications.

Nano letters·2026

Same journal

Symmetrical Tetravalent Aptamer-Protein Conjugate with Ultrahigh <i>In Vivo</i> Stability for Targeted Cancer Imaging and Therapy.

Nano letters·2026

See all related articles

Search research articles

Related Experiment Video

Updated: Jan 17, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Biharmonic-Drive Tunable Josephson Diode.

Laura Borgongino¹, Rubén Seoane Souto², Alessandro Paghi¹

¹NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, I-56127, Pisa, Italy.

|September 17, 2025

Summary

This summary is machine-generated.

Researchers developed a novel superconducting diode effect using a standard Josephson junction and a biharmonic AC drive. This breakthrough enables efficient, wireless control of supercurrent directionality, paving the way for advanced cryogenic electronics.

Keywords:

Josephson diode Josephson junctions biharmonic drive superconducting diode effect superconducting electronics

More Related Videos

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings

Published on: April 16, 2017

Related Experiment Videos

Last Updated: Jan 17, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings

Published on: April 16, 2017

Area of Science:

Condensed Matter Physics
Quantum Electronics

Background:

The superconducting diode effect allows directional supercurrent flow, crucial for cryogenic electronics.
Existing methods require complex materials or magnetic fields, limiting scalability.

Purpose of the Study:

To demonstrate a new method for achieving the superconducting diode effect.
To enable wireless control over diode polarity and efficiency.

Main Methods:

Utilizing a conventional Josephson junction driven by a biharmonic alternating-current (AC) signal.
Employing an antenna for wireless modulation of the diode's characteristics.

Main Results:

Achieved ideal 100% diode efficiency across a wide frequency range.
Demonstrated temperature resilience up to 800 mK.
Showcased efficient AC signal rectification and wireless polarity control.

Conclusions:

This versatile superconducting diode is platform-independent.
It offers a promising component for superconducting digital electronics, including logic gates and switches.