Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Sapphire-Supported Ta-Pt Thin Films for Electrochemical Studies under Hydrothermal Conditions.

ACS omega·2026
Same author

Characterizing nanostructured films using phase sensitive vibrational sum frequency spectroscopy.

The Journal of chemical physics·2026
Same author

Inhomogeneous Charge Carrier Density in Wafer-Scale MoS<sub>2</sub> Caused by Locally Varying Substrate Doping.

ACS applied materials & interfaces·2026
Same author

Defect-engineered competition between exciton annihilation and trapping in MOCVD WS<sub>2</sub>.

Chemical science·2025
Same author

Metastable Crystalline Cobalt Iron Oxide Nano-Flakes with Antiferromagnetic/Ferrimagnetic Composition Mosaicity.

Angewandte Chemie (International ed. in English)·2025
Same author

Giant photoconductance at infinite-layer nickelate/SrTiO<sub>3</sub> interfaces via an optically induced high-mobility electron gas.

Nature materials·2025

Related Experiment Video

Updated: Jan 17, 2026

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
07:00

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Published on: June 25, 2020

7.6K

DFT-Assisted Approach to Low-Temperature Graphene Growth on Sapphire.

Umut Kaya1, Armin Sahinovic2, Leon Lörcher1

  • 1Werkstoffe der Elektrotechnik and CENIDE, University of Duisburg-Essen, Bismarckstraße 81, 47057, Duisburg, Germany.

Small (Weinheim an Der Bergstrasse, Germany)
|September 18, 2025
PubMed
Summary

Researchers developed a low-temperature method for growing graphene on sapphire, a key dielectric material. This technique controls graphene growth by understanding how substrate crystal facets affect carbon atom binding, enabling integration into electronics.

Keywords:
density functional theory (DFT)grapheneplasma‐enhanced chemical vapor depositionsapphire

More Related Videos

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

16.0K
Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

16.0K

Related Experiment Videos

Last Updated: Jan 17, 2026

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
07:00

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Published on: June 25, 2020

7.6K
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

16.0K
Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

16.0K

Area of Science:

  • Materials Science
  • Surface Science
  • Nanotechnology

Background:

  • Direct growth of 2D materials on dielectrics is crucial for technological integration.
  • Sapphire is a widely used dielectric substrate in the semiconductor industry.
  • Controlling 2D material growth on non-catalytic surfaces remains a challenge.

Purpose of the Study:

  • To investigate the mechanism of low-temperature graphene growth on sapphire.
  • To understand the role of substrate crystal facets in graphene nucleation and growth.
  • To develop a controllable method for direct graphene synthesis on dielectric substrates.

Main Methods:

  • Combined experimental and theoretical approach.
  • Density Functional Theory (DFT) calculations to study carbon adsorption energetics.
  • Graphene growth experiments on different sapphire crystal facets (a-plane, c-plane, r-plane).

Main Results:

  • Graphene growth rate on sapphire depends significantly on the crystal facet.
  • Lower coordinated surface oxygen ions on a-plane and c-plane enhance carbon adsorption and growth.
  • Higher coordinated oxygen sites on r-plane hinder adsorption and growth.
  • Achieved controllable graphene formation at 670 °C with sheet resistance as low as 1.65 kΩ □⁻¹.

Conclusions:

  • Surface oxygen coordination dictates carbon binding and graphene growth on sapphire.
  • Tailoring substrate termination enables low-temperature, controllable 2D material growth on dielectrics.
  • This approach offers a potential universal design principle for synthesizing 2D materials on non-catalytic substrates.