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Updated: Jan 17, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Temperature-induced interfacial intermixing and trap modulation in ONO-based flash memory capacitors

Hyunseok Son1, Kyumin Sim1, Hae Chul Hwang2

  • 1Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Republic of Korea.

Nanotechnology
|September 18, 2025
PubMed

Keywords:
activation energycharge trapflash memoryforming gas annealinginterfacial layerintermixing

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