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Strong Electron-Withdrawing Molecules Facilitating π-π Stacking and Charge Transfer Complexes at Buried Interface and
Jiexi Pan1, Jihuai Wu1, Weichun Pan1
1Engineering Research Center of Environment-Friendly Functional Materials, Ministry of Education, Fujian Key Laboratory of Photoelectric Functional Materials, College of Materials Science and Engineering, Huaqiao University, Xiamen, Fujian, 361021, China.
Abstract:
To improve the interfacial match between the hole transport layer (HTL) and perovskite active layer (PAL) in inverted perovskite solar cells (PSCs), a strong electron-withdrawing molecule 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) is introduced to bridge the self-assembled monolayers (SAMs) [2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid (MeO-2PACz) and PAL. F4TCNQ eliminates molecular voids in the SAMs via π-π stacking, forming charge-transfer complexes that homogenize interfacial potential and promote perovskite crystallization, increasing grain size from 0.53 to 0.88 µm. The cyano groups and fluorine atoms on F4TCNQ passivate Pb2⁺ and I- defects through coordination and hydrogen bonding, suppressing ion migration and carrier nonradiative recombination. Meanwhile, p-type doping by F4TCNQ elevates the SAMs work function, reducing the hole extraction barrier by 0.12 eV and enhancing charge transfer driving force. Optimized devices achieve a champion power conversion efficiency of 25.91% with a high open-circuit voltage of 1.202 V, while retaining 91% efficiency after 1000 h of maximum power point tracking, attributed to stabilized ion dynamics and robust interfacial adhesion. This work demonstrates molecular bridging as a scalable strategy for high-performance photovoltaics.
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