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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: Jan 17, 2026

Developing High Performance GaP/Si Heterojunction Solar Cells

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

Optimized Rear-Interface Passivation of SnS Thin-Film Solar Cells Using a Controlled Germanium Oxide Interlayer for

Rahul K Yadav¹, Vishesh Manjunath¹, Yong Tae Kim¹

¹Department of Materials Science and Engineering, and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju, 61186, Republic of Korea.

Small (Weinheim an Der Bergstrasse, Germany)

|September 19, 2025

Summary

A germanium oxide (GeO_x) interlayer effectively passivates the rear contact in tin sulfide (SnS) thin-film solar cells, significantly boosting power conversion efficiency by reducing defects and improving interface quality.

Keywords:

DLTS MoS2 layer formation Na diffusion germanium oxide (GeOx)rear interface passivation tin sulfide (SnS)

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Well-aligned Vertically Oriented ZnO Nanorod Arrays and their Application in Inverted Small Molecule Solar Cells

Published on: April 25, 2018

Area of Science:

Materials Science
Renewable Energy
Semiconductor Physics

Background:

Tin monosulfide (SnS) is a promising earth-abundant absorber for thin-film solar cells (TFSCs).
Device efficiencies are limited by poor interfacial quality at the rear contact (Mo/SnS), causing recombination losses.
Defect states, reactions, and alkali diffusion at the Mo/SnS interface hinder photovoltaic (PV) performance.

Purpose of the Study:

To engineer the back interface of SnS TFSCs using a germanium oxide (GeO_x) interlayer.
To passivate the Mo/SnS interface and mitigate recombination losses.
To enhance the overall power conversion efficiency of SnS-based solar cells.

Main Methods:

Fabrication of SnS TFSCs with a thermally evaporated GeO_x interlayer.
Characterization of the Mo/SnS interface using techniques including Deep-Level Transient Spectroscopy (DLTS).
Analysis of device performance and interfacial properties before and after GeO_x modification.

Main Results:

The GeO_x interlayer improved SnS absorber morphology and passivated deep-level defects.
GeO_x suppressed detrimental sodium (Na⁺) diffusion and inhibited MoS₂ formation.
DLTS confirmed a reduction in Na-induced mid-gap donor-like traps, mitigating non-radiative recombination.

Conclusions:

GeO_x serves as an effective interfacial modifier for SnS TFSCs.
Interface engineering with GeO_x significantly enhances device power conversion efficiency.
This strategy offers a practical solution to overcome performance limitations in SnS solar cells.