Related Experiment Video
Updated: Jan 17, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Probing Green's Function Zeros by Cotunneling through Mott Insulators.
Carl Lehmann1,2, Lorenzo Crippa2,3,4, Giorgio Sangiovanni2,3
1Technische Universität Dresden, Institute of Theoretical Physics, 01069 Dresden, Germany.
Researchers theoretically accessed Green's function zeros (GFZs) in quantum materials using cotunneling. This method reveals the shadow band structure, offering insights into many-body correlations beyond traditional poles.
Area of Science:
- Condensed matter physics
- Quantum mechanics
- Materials science
Background:
- Quantum tunneling experiments reveal excitations as Green's function poles.
- Green's function zeros (GFZs) are less understood but crucial in quantum materials.
- GFZs have largely eluded direct experimental study.
Purpose of the Study:
- To theoretically investigate cotunneling through Mott insulators for accessing GFZs.
- To reveal the shadow band structure associated with GFZs.
- To distinguish GFZ structure from Bloch band structure using many-body correlations.
Main Methods:
- Derivation of an effective Hamiltonian for GFZs.
- Analysis of cotunneling amplitude governed by the GFZ Hamiltonian.
- Perturbative analytical calculations.
- Numerical simulations using exact diagonalization and matrix product states.
Main Results:
- Cotunneling provides direct access to the shadow band structure of GFZs.
- The derived GFZ Hamiltonian governs cotunneling amplitude.
- Fingerprints of many-body correlations are identified, distinguishing GFZs from Bloch bands.
- One-dimensional Su-Schrieffer-Heeger-Hubbard model coupled to quantum dots used as a test system.
Conclusions:
- Cotunneling is a viable theoretical probe for studying GFZs in quantum materials.
- The shadow band structure provides unique insights into strongly correlated systems.
- This work opens avenues for experimental investigation of GFZs.
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Fermi Level
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
Electric Field Inside a Conductor
Suppose a piece of metal is placed near a positive charge. The free electrons in the metal are attracted to the external positive charge and migrate freely toward that region. This region then...
Equipotential Surfaces and Conductors
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

