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Aberration model in extreme ultraviolet lithography for device reliability.

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    |September 23, 2025
    PubMed
    Summary

    This study introduces an analytical model to link extreme ultraviolet lithography (EUVL) aberrations to critical dimension (CD) variations in gate-all-around (GAA) devices. The model helps predict device performance changes due to lithography process variations.

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    Area of Science:

    • Semiconductor Manufacturing
    • Optical Lithography
    • Device Physics

    Background:

    • Lithography quality is crucial for micro-nano device reliability and circuit function.
    • Gate-all-around (GAA) device fabrication relies on advanced extreme ultraviolet lithography (EUVL).
    • EUVL system aberrations significantly impact lithography outcomes and device performance.

    Purpose of the Study:

    • To develop an analytical aberration model for estimating device reliability based on lithography results.
    • To intuitively visualize the relationship between EUVL aberrations and critical dimension (CD) variations.
    • To estimate changes in device performance and circuit functions influenced by lithography aberrations.

    Main Methods:

    • Proposed an analytical aberration model incorporating a Poisson distribution function with correction factors.
    • Utilized curve fitting to determine functional relationships between aberration magnitudes and correction factors.
    • Integrated results to establish a model linking aberration magnitude to CD variation distribution.

    Main Results:

    • Established an analytical model to visualize lithography results under various aberrations.
    • Quantified the impact of aberrations on CD variation distribution.
    • Demonstrated that reducing RMS aberration from 50mλ to 40mλ decreased GAA device saturation current change by 30.9%.

    Conclusions:

    • The developed model enables clear visualization of lithography results and estimation of device performance changes.
    • Designers can use this model to understand process capabilities early in the design stage.
    • Optimizing designs based on this model can prevent excessive performance losses caused by lithography processes.