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Updated: Jan 17, 2026

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Li-Min Cui1,2, Ruiduan Ji1,3, Jian Hao1,2
1State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P.R. China.
Molecularly engineered aluminum (Al8) macrocycles offer a solution for high-performance polymer dielectrics. These materials enhance dielectric constant and humidity resistance, crucial for advanced field-effect transistors (FETs).
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