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A CMOS-Compatible Protonic Memristor Made from H-Graphene/ZrO2/HxWO3 Stacks with Asymmetrical Proton Concentration
Yihan Liu1, Yuzhi He1, Feng Xiong1
1Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA, 15261, USA.
Small (Weinheim an Der Bergstrasse, Germany)
|September 24, 2025
Summary
This study presents a CMOS-compatible protonic memristor using H-graphene/ZrO2/HxWO3. It demonstrates stable resistive switching in various environments, ideal for advanced memory and neuromorphic computing.
Area of Science:
- Materials Science
- Nanotechnology
- Electronics
Background:
- Protonic memristors are promising for nonvolatile memory and neuromorphic computing.
- CMOS-compatibility remains a significant challenge for protonic device integration.
Purpose of the Study:
- To demonstrate a CMOS-compatible protonic memristor device.
- To investigate its resistive switching behavior in diverse environments.
- To explore its potential for high-speed memory and artificial synapse applications.
Main Methods:
- Fabrication of a proton-based H-graphene/ZrO2/HxWO3 memristor.
- Testing resistive switching characteristics in vacuum, atmosphere, and high humidity.
- Applying short voltage pulses (1-20 µs) to induce multistate switching.
Main Results:
- The device exhibits stable resistive switching across multiple operating environments.
- Fabrication and operation are compatible with CMOS technology.
- Multistate resistive switching is achieved rapidly due to proton diffusion.
Conclusions:
- The developed protonic memristor is suitable for integration into Si-based circuits.
- Its rapid multistate switching capability makes it ideal for high-speed nonvolatile memory.
- The device shows potential for artificial synapse applications in neuromorphic systems, particularly for fast pattern learning via SRDP.
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