Related Experiment Video
Updated: Jan 17, 2026

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
Published on: July 5, 2019
Layer- and Charge-State Dependent Magnetic Proximity Modulation of Valley Excitons in MoS2/CrBr3 Heterostructures
Shaofei Li1, Xing Xie1,2, Junying Chen1,2
1Institute of Quantum Physics, School of Physics, Central South University, 932 South Lushan Road, Changsha, Hunan, 410083, P. R. China.
Abstract:
The manipulation of valley degrees of freedom in transition metal dichalcogenides (TMDCs) via the magnetic proximity effect (MPE) is key to advancing next-generation quantum and optoelectronic technologies. However, a comprehensive understanding of how MPE depends on layer configuration and excitonic charge state remains elusive. Here, a systematic study is reported on MPE-induced magneto-optical responses in monolayer and bilayer MoS2 interfaced with few and bulk CrBr3. Photoluminescence spectroscopy reveals a charge state dependent MPE, consistent with a spin-aligned interfacial charge transfer mechanism. Notably, CrBr3 introduces significant Zeeman splitting in 1L-MoS2, with a large splitting of 1.49 meV at zero field, consistent with the theoretical calculation of 1.8 meV. Under high magnetic fields, the g-factors of neutral excitons and trions are enhanced by factors of ≈2.3 and ≈1.8, respectively. In contrast, bilayer MoS2 exhibits a weaker response, highlighting the diminished interfacial exchange coupling in multilayer systems. The findings demonstrate a robust MPE in CrBr3-based heterostructures and provide critical insights into layer and charge state-dependent proximity effects, paving the way for tailored valleytronic functionalities in 2D materials.
More Related Videos
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Valence Bond Theory
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

