Gallium and arsenic human skin permeation after application of GaAs particles: an ex-vivo study using Franz cells

Gallium arsenide (GaAs) is a semiconductor widely used in various technological applications. This study, conducted in a research laboratory, aims to evaluate the cutaneous permeation of GaAs particles using an ex-vivo model with Franz diffusion cells. Dissolution tests indicated that gallium dissociates at higher rates than arsenic in synthetic sweat, but permeation experiments revealed that arsenic is more permeable, particularly in damaged skin conditions. After 24 h of exposure, arsenic concentrations in the receiving compartment were three times higher in damaged skin (1558 ± 546 ng/cm²) than in decontaminated skin (458 ± 144 ng/cm²), (p < 0.05). Gallium concentrations were six times higher in damaged skin (244 ± 5.29 ng/cm²) compared to decontaminated skin (37.1 ± 11.9 ng/cm²), (p < 0.05) Intact skin serves as an effective barrier, while damaged skin significantly increases the permeation of both elements. The decontamination process also enhances penetration due to impairment of the skin's lipid structure. In conclusion, GaAs particles can release arsenic and gallium that penetrate and permeate the skin. These findings highlight the importance of preventive measures in occupational settings to ensure adequate protection.