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The widely used ABC model for semiconductor recombination is inaccurate for multilevel defects. Considering carrier emission reveals a nonlinear dependence of the recombination rate on excess carrier density, necessitating a revised A(n)BC model.

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Area of Science:

  • Semiconductor physics
  • Materials science
  • Computational materials science

Background:

  • The ABC model assumes linear dependence of recombination rate on excess carrier density (Δn), using a constant coefficient A.
  • Multilevel defects in semiconductors can alter charge state distributions with varying Δn.
  • Previous studies often neglect carrier emission from defect levels, impacting recombination rate calculations.

Purpose of the Study:

  • To investigate the impact of carrier emission from multilevel defects on recombination rates.
  • To demonstrate the inadequacy of the linear ABC model for such defects.
  • To propose a revised model, A(n)BC, accounting for defect dynamics.

Main Methods:

  • Computational modeling of carrier capture and emission dynamics in multilevel defects.
  • Analysis of defect charge state distributions under varying excess carrier densities.
  • Case studies on VGa-ON in GaN and PbI in CsPbI3.

Main Results:

  • Carrier emission significantly alters defect charge state distributions.
  • The recombination coefficient A becomes dependent on Δn, i.e., A(n).
  • Neglecting carrier emission can lead to underestimation of recombination rates by over 8 orders of magnitude.

Conclusions:

  • The recombination rate in semiconductors with multilevel defects is nonlinear with Δn.
  • The ABC model requires reformulation to A(n)BC to accurately describe defect-assisted recombination.
  • Future studies on multilevel defects must include carrier emission for accurate results.