Simulation-Based Performance Assessment of Bulk Junctionless FET with Asymmetric Source/Drain for Ultrasensitive...

Area of Science:

• Biotechnology
• Semiconductor Devices
• Biosensors

Background:

• Bio field-effect transistors (BioFETs) offer rapid physiological data detection but often require complex fabrication or reference electrodes.
• A bulk junctionless BioFET (Bulk JL-BioFET) simplifies fabrication and operation by eliminating the need for a reference electrode.

Purpose of the Study:

• To propose and simulate a novel Bulk JL-BioFET design incorporating a doped field stop layer and an asymmetric source/drain structure.
• To enhance the electrical performance, sensitivity, and power efficiency of BioFETs for biosensing applications.

Main Methods:

• Simulations were performed on a novel Bulk JL-BioFET design.
• The design integrates a doped field stop layer to control electric field expansion and an asymmetric source/drain structure for improved electron injection.
• Performance was evaluated by analyzing sensitivity, on-off swing voltage, and turn-on voltage.

Main Results:

• The novel Bulk JL-BioFET design achieved a 30-fold increase in sensitivity compared to conventional structures.
• The integrated features reduced the on-off swing voltage and turn-on voltage, leading to lower power consumption.
• High sensitivity was observed below the turn-on voltage region, indicating optimal operating conditions.

Conclusions:

• The combination of a doped field stop layer and asymmetric source/drain structure is an effective strategy for maximizing BioFET sensing performance.
• This novel design offers a pathway to highly sensitive and power-efficient biosensors for physiological monitoring.