Simulation-Based Performance Assessment of Bulk Junctionless FET with Asymmetric Source/Drain for Ultrasensitive...

Bio field-effect transistors (BioFETs) have attracted attention for their ability to rapidly detect physiological data with a simple structure. While conventional BioFETs offer high sensitivity, they often require reference electrodes or involve complex fabrication processes. A recently proposed bulk junctionless BioFET (Bulk JL-BioFET) features a simple fabrication process to address these issues. This structure utilizes a depletion region formed by a p-n junction, as the active layer is directly in contact with a substrate of the opposite type. As a result, the device can operate effectively with only two terminals-drain and source-without the need for a reference electrode. In this study, we propose a novel Bulk JL-BioFET, incorporating a doped field stop layer and an asymmetric source/drain structure, and verify its performance through simulations. The doped field stop layer blocks the electric field expansion, enhancing channel modulation, while the asymmetric source/drain structure promotes electron injection, reducing the on-off swing voltage and turn-on voltage. This improves the electrical performance, enabling lower power consumption and higher sensitivity. Simulation results show that the combination of these two novel features results in a sensitivity increase of approximately 30-fold. Moreover, high sensitivity was observed below the turn-on voltage region for all the structures when analyzing the sensitivity with overdrive voltage, identifying the optimal operating conditions. This study suggests that the combination of the doped field stop layer and asymmetric source/drain structure is an effective design strategy to maximize the sensing performance of BioFETs while minimizing power consumption.