Mechanism of Tailoring Laser-Induced Periodic Surface Structures on 4H-SiC Crystal Using Ultrashort-Pulse Laser

In this study, we examine the characteristics of laser-induced periodic surface structures (LIPSSs) fabricated on N-doped 4H-SiC (N-SiC) and high-purity 4H-SiC (HP-SiC) crystals using femtosecond-picosecond lasers. The effects of various laser parameters on the orientation, size, and morphology of the LIPSS are systematically investigated. The results reveal that, under identical laser irradiation conditions, the area of LIPSS on both N-SiC and HP-SiC increases linearly with the number of pulses, with N-SiC exhibiting a higher growth coefficient. Furthermore, analysis of differences in photothermal weak absorption and electric field modulation during the LIPSS fabrication process indicates that distinct SiC crystals yield varied LIPSS formation outcomes. This work not only elucidates the underlying physical mechanisms governing LIPSS formation on different silicon carbide crystal surfaces but also provides valuable guidance for precisely controlling the size and orientation of LIPSS regions on various 4H-SiC substrates.