Strain-Enhanced Spin Readout Contrast in Silicon Carbide Membranes

Area of Science:

• Quantum Information Science
• Materials Science
• Solid-State Physics

Background:

• Quantum defects in solids are crucial for quantum technologies.
• High-fidelity single-spin readout is essential, especially for room-temperature applications like quantum biosensing.
• Silicon carbide (SiC) hosts promising quantum defects.

Purpose of the Study:

• To investigate strain as a control parameter for enhancing readout contrast in quantum defects.
• To explore the potential of strain engineering for optimizing spin-photon interfaces.
• To demonstrate experimental validation of strain-induced improvements in SiC quantum defects.

Main Methods:

• Ab initio simulations of quantum defects in 4H silicon carbide.
• Experimental induction of local strain in silicon carbide-on-insulator membranes.
• Measurement of single-spin readout contrast and coherence properties.

Main Results:

• Ab initio simulations confirmed strain as an effective method to enhance readout contrast.
• Experimental validation achieved over 60% readout contrast by applying local strain.
• Favorable coherence properties of single spins were maintained under strain.

Conclusions:

• Strain engineering is a powerful strategy for optimizing coherent spin-photon interfaces.
• This approach is particularly effective for PL6 divacancy centers in silicon carbide.
• The findings have implications for advancing quantum technologies, including quantum biosensing.