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Electric Hall Effect and Quantum Electric Hall Effect.

Chaoxi Cui1, Run-Wu Zhang1, Yuhui Qiu1

  • 1Beijing Institute of Technology, Beijing Institute of Technology, Beijing Institute of Technology, Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing 100081, China, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing 100081, China, and , Zhuhai 519000, China.

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This summary is machine-generated.

Researchers introduce electric Hall effects (EHE) and quantum electric Hall effects (QEHE) in 2D magnetic systems. These phenomena use electric fields instead of magnetic fields to generate transverse currents, offering tunable control for potential applications.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Phenomena

Background:

  • The ordinary Hall effect and quantum Hall effect are observed in 2D nonmagnetic systems under magnetic fields.
  • These effects involve generating a transverse current due to an applied magnetic field perpendicular to an electron current.

Purpose of the Study:

  • To propose and investigate electric counterparts of the Hall effects, termed electric Hall effect (EHE) and quantum electric Hall effect (QEHE).
  • To explore the emergence of EHE and QEHE in 2D magnetic systems using electric gate fields.

Main Methods:

  • Symmetry analysis to establish requirements for intrinsic EHE and QEHE.
  • Analytical expression for the intrinsic EHE coefficient under weak gate fields.
  • First-principles calculations to investigate EHE in specific materials (monolayer Ca(FeN)2).
  • Demonstration of QEHE in a semiconductor monolayer (BaMn2S3) by varying gate fields.

Main Results:

  • EHE and QEHE are proposed to occur in 2D magnetic systems, driven by electric gate fields.
  • The intrinsic EHE coefficient is determined by Berry curvature polarization and polarizability.
  • Significant EHE observed in monolayer Ca(FeN)2 near band crossings.
  • Quantized Hall conductivity (0, ±1 in units of e²/h) demonstrated for QEHE in BaMn2S3 via gate field variation.

Conclusions:

  • The proposed EHE and QEHE offer electric field tunability, unlike traditional magnetic field-dependent Hall effects.
  • These phenomena have significant potential for applications due to their easy control via electric gates.
  • The findings provide a new avenue for exploring topological phenomena in condensed matter systems.