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Updated: Jan 16, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Juntaek Oh1, Jaehyeon Son1, Changhyeong Yoon1
1Advanced Process Development Lab 4, Semiconductor R&D Center, Samsung Electronics Co., Ltd., 1-1 Samsungjeonja-ro, hwaseong-si, Gyeonggi-do, 18848, Republic of Korea.
We developed a novel ultra-wide-field imaging Mueller matrix spectroscopic ellipsometry system for semiconductor metrology. This advanced system significantly boosts data acquisition and throughput, enabling precise defect detection for enhanced manufacturing yield.
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