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Updated: Jan 16, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
Controlling the Digital to Analog and Multilevel Switching in Memristors Based on Zr-Doped HfO2 by Interface
Cong Han1,2, Haiming Qin1,2, Weijing Shao2
1College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, No. 9 Wenyuan Road, Nanjing 210023, China.
Abstract:
Metal oxides are the most widely used material for the resistive switching layer of memristors. Nevertheless, the majority of oxide-based memristors exhibit binary switching, restricting the emulation of neuronal synaptic behaviors. In this paper, the shift from digital-to-analog switching behavior is achieved by inserting an Al2O3 layer atop Zr-doped HfO2. The TiN/Al2O3/HZO/W/Si device exhibits long resistance state retention time and consistency. In addition, by applying a varying voltage, the device exhibits up to 20 continuous resistance states, which is highly significant for high-density storage. Upon the application of a programmable pulse signal, the device's conductance undergoes continual alteration, reflecting long-term potentiation (LTP) and long-term depression (LTD) synaptic characteristics. The conduction mechanism of the device is studied through physical model fitting and schematic diagrams.
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