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Substrate Orientation-Dependent Synaptic Plasticity and Visual Memory in Sol-Gel-Derived ZnO Optoelectronic Devices.

Dabin Jeon1, Seung Hun Lee1, JungBeen Cho2

  • 1Department of IT & Semiconductor Convergence Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.

Materials (Basel, Switzerland)
|September 27, 2025
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Substrate orientation significantly impacts optoelectronic synaptic device performance. Devices on m-plane sapphire exhibit enhanced memory retention and synaptic plasticity for neuromorphic computing applications.

Keywords:
ZnOneuromorphic computingoptoelectronic synapsesapphire substratesol–gel methodsynaptic plasticityvisual memory

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Area of Science:

  • Materials Science
  • Neuroscience
  • Electrical Engineering

Background:

  • Optoelectronic synaptic devices mimic biological synapses for neuromorphic computing.
  • ZnO-based devices offer promising properties for artificial intelligence hardware.
  • Substrate selection is crucial for optimizing device performance.

Purpose of the Study:

  • To investigate the influence of substrate orientation (c-plane vs. m-plane sapphire) on Al/ZnO/Al optoelectronic synaptic devices.
  • To analyze the impact of crystallographic effects on synaptic behaviors and memory retention.
  • To demonstrate the practical application of these devices in optoelectronic synaptic arrays.

Main Methods:

  • Fabrication of Al/ZnO/Al synaptic devices using a sol-gel process on c-plane and m-plane sapphire substrates.
  • Characterization of essential synaptic behaviors including excitatory postsynaptic current (EPSC) modulation, paired-pulse facilitation, and learning-forgetting dynamics.
  • Construction and testing of 3x3-pixel optoelectronic synaptic arrays to demonstrate pattern encoding and retention.

Main Results:

  • Devices exhibit key synaptic functionalities: EPSC modulation, paired-pulse facilitation, and Wickelgren's power law-described learning-forgetting.
  • M-plane sapphire substrates yield devices with higher EPSCs, slower decay rates, and superior memory retention compared to c-plane.
  • Crystallographic effects on m-plane substrates enhance carrier trapping and persistent photoconductivity, improving memory performance.
  • Successful encoding, learning, and retention of an optical pattern within a 3x3-pixel array were demonstrated.

Conclusions:

  • Substrate orientation is a critical factor in tailoring synaptic plasticity and memory retention in ZnO-based optoelectronic synapses.
  • M-plane sapphire offers superior performance for optoelectronic synaptic devices, enhancing their suitability for neuromorphic computing.
  • These findings pave the way for advanced ZnO-based optoelectronic synaptic arrays in in-sensor computing and artificial visual memory systems.