Atomic Insight into the Nano-Grinding Mechanism of Reaction-Bonded Silicon Carbide: Effect of Abrasive Size

Reaction-bonded silicon carbide (RB-SiC) is a high-performance ceramic material known for its excellent mechanical, thermal, and chemical properties. It contains phases with different mechanical properties, which introduce complex machining mechanisms. In the present work, molecular dynamics (MD) simulation was conducted to investigate the effect of abrasive size on the nano-grinding mechanism of RB-SiC. The surface morphology and subsurface deformation mechanism were investigated. The simulation results suggest that when a small abrasive is used, the surface swelling of SiC is primarily generated by the bending and tearing of SiC at the interfaces. As the abrasive radius increases, the surface swelling is mainly formed by Si atoms, which is identified as elastic recovery. Meanwhile, the material removal rate gradually decreases, and the depth of plastic deformation is obviously increased. Stocking of Si is more apparent at the interface, and obvious sliding of SiC grains is observed, forming edge cracks at the margin of the workpiece. In the subsurface workpiece, the high-pressure phase transition (HPPT) of Si is promoted, and the squeeze of disordered Si is obvious with more dislocations formed when larger abrasive is used.