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Updated: Jun 19, 2026

Writing and Low-Temperature Characterization of Oxide Nanostructures
Published on: July 18, 2014
Cryogenic in situ fabrication of reversible direct write logic circuits and devices
Yuhao Hong1,2, Lei Wang1, Ziyue Shen1
1National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, China.
Abstract:
Signal transmission across cryogenic and room-temperature environments remains a significant bottleneck in superconducting quantum computing and classical circuit integration. Furthermore, interactions among cryogenic devices often require room-temperature interfacing, driving substantial demand for data read/write interfaces, which in turn increases interconnect complexity and constrains scalability. In situ fabrication of cryogenic, high-performance logic circuits and devices presents a promising solution to address this "wiring bottleneck". Here, we demonstrated interfacial two-dimensional electron gas devices with reversible interface states that can be directly modulated at operating temperatures while achieving an unprecedented ultrahigh on/off ratio. Remarkably, these devices can be patterned using a "light pencil" and erased with a pulsed electric field, enabling resist free, in situ direct writing and electrical erasure of the interface state.
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