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Updated: Jan 16, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Van der Waals Template-Assisted Growth of Two-dimensional Sb2S3
Sindhu Priya Giridhar1, Irfan H Abidi1, Jiawen Qiu2
1Centre for Opto-electronic Materials and Sensors (COMAS), School of Engineering, RMIT University, 124 La Trobe Street, Melbourne, Victoria, 3001, Australia.
Abstract:
Antimony sulfide (Sb2S3), a representative of the pnictogen chalcogenide family, possesses a tunable bandgap, strong optical absorption, and phase-change functionality, making it a promising candidate for next-generation optoelectronic and memory devices. However, its intrinsic quasi-one-dimensional (1D) crystal structure favors nanowire or nanorod growth, hindering synthesis in two-dimensional (2D) form and limiting integration into ultrathin planar device architectures. Here, van der Waals (vdW) template-assisted growth of atomically thin 2D Sb2S3 nanosheets on monolayer molybdenum disulfide (MoS2) single crystals is demonstrated, using a low-temperature chemical vapor deposition process. The density functional theory calculations reveal that MoS2 lowers diffusion barriers and weakens precursor molecules adsorption, promoting lateral diffusion and 2D growth while suppressing thermodynamically favored 1D morphologies. The resulting 2D Sb2S3 exhibits sub-8 nm thickness and with lateral dimensions dictated by the underlying MoS2 single-crystal template. Remarkably, devices fabricated on the resulted Sb2S3 integrated MoS2 heterostructure demonstrate broadband photodetection from ultraviolet to near-infrared, with photoresponsivity enhanced by two orders of magnitude and improved field-effect mobility compared to bare monolayer MoS2. These results establish a scalable route to access 2D forms of quasi-1D chalcogenides, bridging the critical gap between theoretical predictions and practical applications while enabling their integration into ultrathin, interface-engineered optoelectronic and memory devices.
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