Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

The Electrical Double Layer

The Electrical Double Layer

In the region where two bulk phases meet, an intricate electric charge distribution arises due to charge transfer, ion adsorption, molecular orientation, and charge distortion. This complex distribution is commonly referred to as the electrical double layer.When a solid electrode interfaces with ions in an electrolyte solution, the speed of electron transfer dictates the rates of oxidation and reduction. The electrode acquires a charge through the escape of atoms into the solution as cations or...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Probing Moiré Excitons in MoSe<sub>2</sub>/WSe<sub>2</sub> Heterobilayers by Combined Micro-photoluminescence and Lateral Force Microscopy.

Nano letters·2026

Same author

Expanding Technology-Enabled, Nurse-Delivered Chronic Disease Care : A Pragmatic, Randomized, Effectiveness-Implementation Trial.

Annals of internal medicine·2026

Same author

Strategies for mitigating artificial intelligence bias in healthcare: a systematic review.

JAMIA open·2026

Same author

Superconductivity proximate to non-Abelian fractional spin Hall insulator in twisted bilayer MoTe<sub>2</sub>.

Nature communications·2026

Same author

Real-world outcomes of ponatinib in heavily pretreated patients with chronic myeloid leukemia and Philadelphia chromosome-positive acute lymphoblastic leukemia.

Annals of hematology·2026

Same author

Imaging the flat bands of magic-angle graphene reshaped by interactions.

Nature·2026

Search research articles

Related Experiment Video

Updated: May 6, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Electric Field Tunable Interlayer Sliding Ferroelectricity in 2H-Stacked Multilayer WSe₂.

Jinkyu Kim¹, Taehun Lee¹, Cheong-Eung Ahn^2,3

¹Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.

|September 30, 2025

Summary

Ferroelectric switching was observed in naturally stacked Tungsten diselenide (WSe2) multilayers. This discovery enables scalable, low-power memory devices without artificial symmetry breaking.

Keywords:

2H-stacked multilayer WSe2 electric field controllable electrical polarization ferroelectric memory graphene sensor interlayer sliding ferroelectricity

More Related Videos

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

Related Experiment Videos

Last Updated: May 6, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Two-dimensional (2D) ferroelectric materials offer potential for advanced memory devices.
Current 2D ferroelectric systems often require complex structures like moiré superlattices or specific stacking (e.g., rhombohedral), hindering scalability and manufacturing.
Developing ferroelectricity in naturally stacked 2D materials is crucial for practical applications.

Purpose of the Study:

To investigate emergent ferroelectric switching in hexagonal (2H)-stacked multilayer Tungsten diselenide (WSe2) heterostructures.
To explore the influence of external electric fields on ferroelectric properties in these materials.
To understand the mechanism of ferroelectricity in naturally stacked 2D transition metal dichalcogenides (TMDs).

Main Methods:

Fabrication of devices using multilayer WSe2 (2L or thicker) and graphene electrical sensors.
Four-terminal resistance measurements to detect hysteresis and switching behavior.
Density functional theory (DFT) calculations to model the effect of electric fields on crystal symmetry and polarization.

Main Results:

Clear ferroelectric switching and hysteresis were observed in 2H-stacked multilayer WSe2 devices, stable over multiple cycles.
Applying a gate voltage enhanced polarization magnitude and relaxation time.
DFT calculations confirmed that electric fields induce interlayer sliding, breaking symmetry and leading to ferroelectricity, consistent with experimental Hall measurements.

Conclusions:

Ferroelectric switching emerges in naturally stacked 2H-WSe2 multilayers due to electric-field-induced symmetry breaking via interlayer sliding.
This finding demonstrates a pathway for scalable ferroelectric devices without artificial structural modifications.
The study advances the understanding of ferroelectricity in TMDs and its potential for next-generation electronics.