Related Experiment Video
Updated: Jan 16, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Design and simulation of a low-energy atomic silicon quantum-dot circuit with potential in internet of things
Hadi Rasmi1, Mohammad Mosleh2, Nima Jafari Navimipour3,4,5
1Department of Computer Engineering, Dez.C., Islamic Azad University, Dezful, Iran.
Abstract:
This paper addresses critical issues such as leakage and heating in Internet of Things (IoT) circuits by exploring alternatives beyond CMOS technology. Atomic silicon dangling bond (ASDB) technology emerges as a promising substitute for executing nanoscale logic circuits, particularly for IoT applications requiring compactness, efficiency, and energy optimization. We propose a Hammer-shaped design for ASDB basic gates to enhance circuit stability and optimality, which is vital for the reliable operation of IoT systems. we demonstrate a new ASDB one-bit comparator circuit to highlight the practical application of the proposed design, which is crucial for real-time data processing in smart homes, industrial automation, health monitoring, connected vehicles, environmental sensors, and smart grids. By integrating high-performance comparator circuits, IoT networks gain improved accuracy and reduced latency, enabling advancements in energy management and wearable electronics. Simulation results highlight significant improvements, including a 33% enhancement in occurrence, 27.% in energy efficiency, 56% resistance to DB omission, and 51% in extra DB deposition.
More Related Videos
Related Concept Videos
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Types of Semiconductors
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Energy Bands in Solids
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...

