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Sensitive Sub-THz Photodetection in Twisted Graphene with Broad Spectral Response.

Jiaxin Wu1,2, Meiye Hou3, Shuangxing Zhu1,2

  • 1State Key Laboratory of Micro-Nano Engineering Science, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai, 200240, China.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|October 1, 2025
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Summary

Twisted monolayer-bilayer graphene moiré superlattices create tunable bandgaps for enhanced photodetector performance. This breakthrough offers sensitive broadband photodetection, especially in the sub-terahertz range.

Keywords:
bolometric effectgate‐tuningphotothermoelectric effectsub‐terahertz detectiontwisted graphene superlattice

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Optoelectronics

Background:

  • Graphene's photo-induced hot-electron effect advances ultrafast photodetectors.
  • Graphene's intrinsic properties limit photo-electrical conversion efficiency and responsivity.

Purpose of the Study:

  • To enhance photodetector performance by engineering graphene's band structure.
  • To develop sensitive broadband photodetectors using moiré superlattices.

Main Methods:

  • Stacking monolayer-bilayer graphene into a moiré superlattice.
  • Fabricating dual-gate twisted monolayer-bilayer graphene (TMBG) transistors.
  • Characterizing device performance across visible to sub-terahertz spectrum.

Main Results:

  • TMBG transistors show consistent response across the entire spectral range.
  • Identified photothermoelectric and bolometric effects as response mechanisms.
  • Achieved high responsivity (16.9 A/W) and low noise equivalent power (27 fW/Hz^1/2) at 0.3 THz and 4.5 K, with room-temperature operation.

Conclusions:

  • Moiré graphene offers a promising platform for high-performance ultra-broadband detectors.
  • TMBG transistors demonstrate significant potential for sensitive sub-terahertz photodetection.
  • Tunable bandgaps in moiré superlattices are key to improved optoelectronic device performance.