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Amorphous phase-change memory alloy with no resistance drift.

Xiaozhe Wang1, Ruobing Wang2, Suyang Sun1

  • 1Center for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, China.

Nature Materials
|October 1, 2025
PubMed
Summary
This summary is machine-generated.

Researchers designed novel amorphous phase-change materials, specifically CrTe3, that prevent resistance drift. This breakthrough enables stable neuromorphic computing and multilevel data storage across a wide temperature range.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Glassy materials exhibit spontaneous structural relaxation due to their metastable nature.
  • Resistance drift in phase-change materials hinders neuromorphic computing applications.
  • Designing stable amorphous alloys is crucial for reliable electronic devices.

Purpose of the Study:

  • To design and demonstrate amorphous phase-change materials with suppressed resistance drift.
  • To explore the potential of these materials for neuromorphic computing and data storage.
  • To investigate the stability and applicability of CrTe3 across a broad temperature range.

Main Methods:

  • Ab-initio calculations to inform material design.
  • Fabrication and characterization of amorphous CrTe3 thin films.
  • Electrical resistance measurements from -200°C to 165°C.
  • Hybrid opto-electronic multilevel encoding demonstration.
  • Integration into an electronic device for path-tracking functionality.

Main Results:

  • Amorphous CrTe3 thin films exhibit virtually no resistance drift.
  • Stable operation observed across a wide temperature range (-200°C to 165°C).
  • Demonstrated multilevel data encoding capability.
  • No-drift behavior confirmed in melt-quenched amorphous CrTe3 devices.
  • Successful application demonstration in an automatic path-tracking vehicle system.

Conclusions:

  • Robust molecule-like motifs in CrTe3 effectively prevent structural relaxation and resistance drift.
  • CrTe3 offers a promising solution for stable phase-change neuromorphic computing.
  • The material's stability and functionality open avenues for advanced electronic devices and data storage.