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MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

785
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
785
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
905
Characteristics of MOSFET01:17

Characteristics of MOSFET

949
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
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MOSFET01:16

MOSFET

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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
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MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

822
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
822
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

555
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Related Experiment Video

Updated: Jan 16, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

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High-On/Off-Ratio Vertical Transistors with Defect-Engineered MoSe2 and van der Waals VSe2 Contacts.

Da Eun Choi1, Hyokwang Park2, Hyungyu Choi2

  • 1School of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, Republic of Korea.

ACS Nano
|October 2, 2025
PubMed
Summary

Researchers developed advanced molybdenum diselenide (MoSe2) vertical field-effect transistors (VFETs) that significantly reduce leakage currents. This breakthrough achieves high on/off ratios, paving the way for next-generation electronics.

Keywords:
GFFRVFETdefect-controlled MoSe2on/off current ratiovacuum pre-annealing

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Last Updated: Jan 16, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
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Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Devices

Background:

  • Vertical field-effect transistors (VFETs) based on 2D materials offer potential for ultrashort channels.
  • Performance limitations include leakage currents from negative threshold voltages and gate-field-free regions (GFFRs).

Purpose of the Study:

  • To demonstrate high-performance n-channel MoSe2 VFETs with suppressed leakage currents in GFFRs.
  • To achieve high on/off current ratios exceeding 10^5.

Main Methods:

  • Vacuum pre-annealing of MoSe2 to create a low-defect channel with near-zero threshold voltage.
  • Integration of VSe2 as a drain electrode for defect-free van der Waals contact.

Main Results:

  • Achieved effective leakage current suppression in GFFRs under zero gate bias.
  • Demonstrated MoSe2 VFETs with on/off current ratios exceeding 10^5.
  • Engineered MoSe2 VFETs showed a 3-order higher on/off ratio compared to MoS2 VFETs.

Conclusions:

  • Vacuum pre-annealing and VSe2 integration effectively reduce leakage currents in MoSe2 VFETs.
  • These defect-suppression strategies are crucial for advancing VFET technology.
  • The study provides insights into charge transport mechanisms for next-generation devices.