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Topological Valley Transport in Bilayer Graphene Induced by Interlayer Sliding
Jie Pan1, Huanhuan Wang1, Lin Zou1
1Xi'an Jiaotong University, MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Shaanxi Province Key Laboratory of Advanced Materials and Mesoscopic Physics, School of Physics, Xi'an 710049, China.
None:
Interlayer sliding, together with twist angle, is a crucial parameter that defines the atomic registry and thus determines the properties of two-dimensional (2D) material homobilayers. Here, we theoretically demonstrate that controlled interlayer sliding in bilayer graphene induces Berry curvature reversals, leading to topological states confined within a one-dimensional moiré channel. We experimentally realize interlayer sliding by bending the bilayer graphene geometry across a nanoridge. Systematic electronic transport measurements reveal topological valley transport when the Fermi energy resides within the band gap, consistent with theoretical predictions of eight topological channels. Our findings establish interlayer sliding as a powerful tool for tuning the electronic properties of bilayer graphene and underscore its potential for broad application across 2D material systems.
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