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Enabling High-Throughput Perovskite FET Research by a Customizable Automated FET Measurement Station
Claas Wieland1, Giovanni Ligorio2, Emil List-Kratochvil3
1Institut für Physik, Institut für Chemie, Humboldt-Universität zu Berlin.
Journal of Visualized Experiments : Jove
|October 6, 2025
Summary
Developing novel perovskite compositions and fabrication techniques is key for advancing perovskite-based thin-film field-effect transistors (PeFETs). This study introduces a high-throughput automated process for efficient device characterization and data analysis.
Area of Science:
- Materials Science
- Electronics Engineering
- Chemical Engineering
Background:
- Perovskite-based thin-film field-effect transistors (PeFETs) show great promise but haven't reached their full theoretical potential.
- Optimizing perovskite compositions and fabrication methods is crucial for PeFET advancement.
- The vast number of variables necessitates a high-throughput approach for efficient research.
Purpose of the Study:
- To present a flexible, customizable, and automated process for fabricating and characterizing PeFETs.
- To enable efficient exploration and optimization of novel perovskite materials and fabrication conditions.
- To establish a systematic data pool for comparing different perovskite formulations and processing parameters.
Main Methods:
- Integration of photolithography for custom device patterning.
- Development of an automated measurement station with a multiplexer to characterize multiple devices simultaneously.
- Automated data analysis of transfer and output characteristics for key performance parameters.
Main Results:
- Automated measurement of up to 20 devices per batch, accommodating 5 different perovskite formulations.
- Generation of transfer and output characteristics, threshold voltage, subthreshold swing, and field-effect mobility.
- Creation of a systematically organized dataset for direct comparison of various perovskite compositions and fabrication conditions.
Conclusions:
- The presented automated process significantly enhances the efficiency of perovskite-based thin-film field-effect transistor research.
- This high-throughput methodology facilitates the systematic optimization of materials and fabrication techniques.
- The systematic data generation supports accelerated development and discovery in the field of PeFETs.

