Enabling High-Throughput Perovskite FET Research by a Customizable Automated FET Measurement Station

Perovskite-based thin-film field effect transistors (PeFETs) have yet to achieve the full theoretical potential of this promising class of materials. To bridge this gap, it is essential to develop and optimize novel perovskite compositions and fabrication techniques. Given the large variety of potential compounds as well as the manifold of influencing variables such as concentration, temperature, and choice of solvent, a high-throughput research approach is critical for efficient exploration and advancement. We present a flexible and customizable process that spans from substrate fabrication to device characterization. This process is enabled by and integrates photolithography for custom patterning, an automated measurement station for FET characterization, and automated data analysis. The automated measurement station is based on a multiplexer, which is connected to five measurement boards. The measurement boards are configured to measure one substrate with four devices each. Allowing the automated measurement of 20 devices with up to 5 different perovskite formulations. Using standardized testing procedures, the raw data is automatically analyzed to get the transfer and output characteristics of the PeFETs as well as key performance parameters like the threshold voltage, subthreshold swing, and the field effect mobility. The result is a systematically organized data pool with easily comparable data for different perovskite compositions or modifications in fabrication conditions.