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High-CRI White Organic Light-Emitting Transistors with Ultrathin Emissive Layers for Full-Color Display.
Zhagen Miao1, Molin Shen1,2, Haikuo Gao3
1Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.
Advanced Materials (Deerfield Beach, Fla.)
|October 7, 2025
Summary
Researchers developed high color rendering index (CRI) white organic light-emitting transistors (OLETs) using ultrathin emissive layers. This simplifies fabrication and achieves excellent color fidelity for advanced displays.
Area of Science:
- Optoelectronics
- Materials Science
- Display Technology
Background:
- Organic light-emitting transistors (OLETs) are key for next-gen displays.
- High color rendering index (CRI) white OLETs are crucial for full-color applications.
- Conventional doping methods for white OLETs face challenges in precise concentration control.
Purpose of the Study:
- To present a novel strategy for fabricating high-CRI white OLETs.
- To overcome limitations of conventional doping techniques.
- To enable simple fabrication and efficient exciton management.
Main Methods:
- Fabrication of OLETs utilizing ultrathin emissive layers (UEMLs).
- Implementation of 2D energy transfer across adjacent layers for exciton management.
- Integration of electrical switching with white light emission in the OLET architecture.
Main Results:
- Achieved uniform area emission with low turn-on voltage (<6 V) and CRI > 90.
- Demonstrated superior performance for ultrathin non-doped electroluminescent devices.
- Fabricated a 12x20 OLET pixel array for a planar backlight, achieving 117% NTSC color gamut coverage.
Conclusions:
- The UEML strategy offers a simplified approach to high-CRI white OLET fabrication.
- The developed OLETs exhibit excellent performance suitable for vivid full-color displays.
- This work presents a viable pathway for scalable, high-quality full-color OLET displays.
