Phase-Change Materials for Volatile Threshold Resistive Switching and Neuronal Device Applications.

Huandong Chen1, Jayakanth Ravichandran1,2,3

  • 1Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, 90089, USA.

Summary

Phase-change materials exhibiting volatile resistive switching and neuronal oscillations are advancing neuromorphic computing. This review covers VO2, 1T-TaS2, and BaTiS3 for brain-inspired computing applications.

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