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Transferable Highly Crystalline Perovskite Ferroelectrics for Low-Power Memory.

Tianqing Wan, Yiping Xiao, Zhihang Xu

  • 1School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430000, China.

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|October 10, 2025
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Summary

Ferroelectric field-effect transistors (FeFETs) using transferable bismuth ferrite (BiFeO3) offer low-power memory solutions. This research demonstrates high-quality BiFeO3 integration for efficient, compact FeFETs and computing systems.

Keywords:
ferroelectric field-effect transistorlow-power memoryneuromorphic computingtransferable perovskitetwo-dimensional material

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Device Engineering

Background:

  • Data-centric applications require energy-efficient and compact memory.
  • Ferroelectric field-effect transistors (FeFETs) offer potential but face material limitations.
  • Developing compatible ferroelectric materials with low switching energy is crucial.

Purpose of the Study:

  • To investigate the integration of transferable bismuth ferrite (BiFeO3) with two-dimensional materials for low-power FeFETs.
  • To characterize the ferroelectric properties of BiFeO3 films and their performance in FeFET devices.
  • To demonstrate a compact, all-FeFET computing system for pattern classification.

Main Methods:

  • Transfer of high-quality perovskite ferroelectric BiFeO3 films.
  • Fabrication of metal-ferroelectric-semiconductor (MFS) and metal-ferroelectric-metal-insulator-semiconductor (MFMIS) FeFET structures.
  • Integration with molybdenum disulfide (MoS2) to form high-quality interfaces.
  • Device characterization and performance evaluation for memory and computing applications.

Main Results:

  • Transferred BiFeO3 films exhibited a low coercive field (30 kV/cm) and leakage current (<10^-5 A/cm^2), yielding a switching energy of 0.05 J/cm^3.
  • MFS and MFMIS FeFETs demonstrated low power consumption (1.5 fJ/bit/μm^2 and 11.2 fJ/bit/μm^2, respectively).
  • A functional all-FeFET computing system for pattern classification was successfully constructed.

Conclusions:

  • Transferable high-quality BiFeO3 is a viable material for low-power FeFETs.
  • The developed FeFETs enable efficient volatile and nonvolatile memory operations.
  • This work highlights the potential of BiFeO3-based FeFETs for future low-power memory and computing systems.