High-Efficiency Deep Ultraviolet Light-Emitting Diodes without an Electron Blocking Layer Enabled by a
Xien Sang1, Aoxiang Zhang1, Xin Wang1
1National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, School of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, Henan 450001, P. R. China.
None:
Deep ultraviolet light-emitting diodes (DUV-LEDs) face critical challenges such as poor hole injection and significant electron leakage, both of which severely limit their external quantum efficiency (EQE). This study possesses and simulates six DUV-LED structures featuring p-type superlattices with varying aluminum compositions using the SiLENSe module that integrates Schrödinger-Poisson and drift-diffusion models. Among them, structure F, which eliminates the conventional electron blocking layer (EBL) and incorporates a graded Al0.8Ga0.2N/Al0.6Ga0.4N superlattice, demonstrates the best performance. It achieves an EQE of 6.3% and a peak optical output power of 25 mW. Detailed analyses of band diagrams and carrier distributions confirm that the structure simultaneously enhances hole injection and effectively suppresses electron leakage. These improvements are attributed to the formation of stepped valence band profiles and reinforced electron barriers within the superlattice. This dual-function design highlights a viable and efficient strategy for advancing high-performance DUV-LEDs through p-type band engineering without relying on traditional EBLs.
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