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Spin-Orbit Torque-Assisted Voltage-Controlled Magnetization Switching for Reliable Nonvolatile Memory.

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Summary

We reduced write error rates in voltage-controlled magnetic random-access memory (VC-MRAM) by over two orders of magnitude. This hybrid approach uses spin-orbit torque (SOT) to assist voltage control, improving energy efficiency for future memory applications.

Keywords:
magnetic random-access memoryspintronicsspin−orbit torquesubnanosecond magnetization switchingvoltage-controlled magnetic anisotropywrite error rate

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Computer Science

Background:

  • Voltage-controlled magnetic random-access memory (VC-MRAM) offers ultrafast switching (<1 ns) and low write energy (
  • High write error rates (WER) in VC-MRAM, due to voltage switching oscillations, limit its practical application and require precise pulse timing.
  • Spin-orbit torque (SOT) enables ultrafast magnetization switching above a critical current threshold dependent on magnetic anisotropy.

Purpose of the Study:

  • To develop a hybrid switching mode for VC-MRAM that reduces write error rates.
  • To investigate the use of subcritical spin-orbit torque (SOT) current to assist voltage-controlled magnetic anisotropy (VCMA) switching.
  • To evaluate the performance enhancement and suitability of SOT-assisted VC-MRAM for compute-in-memory applications.

Main Methods:

  • Fabrication of a back-end-of-line compatible device using a Ta/Mo seed layer.
  • Implementation of hybrid mode operation combining VCMA and subcritical SOT current.
  • Characterization of magnetic switching dynamics and write error rates under different operating modes.
  • Micromagnetic simulations to analyze magnetization dynamics and free energy changes.

Main Results:

  • Demonstrated a hybrid mode utilizing subcritical SOT current to assist VCMA-induced switching in a Ta/Mo device.
  • Achieved a reduction in VC-MRAM write error rates by over two orders of magnitude compared to conventional VC-MRAM.
  • Observed modified magnetization dynamics and micromagnetic free energy changes contributing to improved WER.
  • Reported an enhanced energy-delay product surpassing conventional VC-MRAM.

Conclusions:

  • SOT-assisted VC-MRAM significantly improves reliability and energy efficiency.
  • The hybrid approach overcomes limitations of pure VCMA switching.
  • SOT-assisted VC-MRAM is a promising technology for advanced compute-in-memory applications, including binary neural networks.