Enhancing the stability of red-emitting CsPbIxBr3-x QDs for advanced display applications
Bin Wang1, Fengyi Zhang1, Rongqiu Lv1
1Nanjing University of Science and Technology, Institute of Optoelectronics and Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing, Jiangsu, China. chenjun@njust.edu.cn.
Abstract:
All-inorganic metal halide perovskite (MHP) materials have emerged as promising candidates for next-generation displays owing to their narrow emission spectra, near-unity photoluminescence quantum yield (PLQY), and exceptional defect tolerance. However, the development of pure red-emitting devices (620-660 nm) based on cesium lead iodide/bromide (CsPbIxBr3-x) quantum dots (QDs) remains challenging because of their susceptibility to environmental factors (moisture, heat, oxygen, and light) and intrinsic structural instability. Recent progress in the engineering of stable red-emitting CsPbIxBr3-x QDs has centered on three main approaches: ion doping, ligand exchange, and encapsulation strategies, each offering distinct physicochemical characteristics and complementary advantages in stabilization. This review highlights the various causes of instability and degradation mechanisms of red-emitting cesium lead iodide bromide QDs and discusses innovative approaches to enhance their stability and optoelectronic performance. By tailoring the structure of QDs and shielding them from environment factors, significant progress has been made in prolonging their luminescence lifetime and performance. Besides, we outline future research directions, emphasizing the need for scalable and sustainable solutions to unlock the full potential of MHP QDs in advanced high-efficiency display technologies.
