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Promoting Anderson Localization for Low-Frequency Phonons in SiGe Alloyed Nanowires with Long-Range Correlated
Wei Zhang1,2, Shiyun Xiong3, Yangyu Guo1
1School of Energy Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.
Long-range Ge correlations in SiGe nanowires suppress low-frequency phonon transmission, enabling Anderson localization. This reduces thermal conductivity by up to 60% and advances heat management technologies.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Phonon Anderson localization is key for thermal management and energy harvesting.
- Rayleigh scattering governs phonon transport in materials with point disorder.
- Controlling phonon transport in low-dimensional systems is challenging.
Purpose of the Study:
- To investigate design principles for achieving low-frequency phonon Anderson localization.
- To explore the impact of Ge spatial distribution in SiGe nanowires on phonon transport.
- To reduce thermal conductivity in nanostructures.
Main Methods:
- Nonequilibrium Green's function (NEGF) method.
- Simulations of phonon transport in SiGe nanowires with varying Ge spatial correlations.
- Analysis of phonon transmission, localization frequencies, and thermal conductivity.
Main Results:
- Long-range Ge correlations significantly suppress low-frequency phonon transmission (< 2 THz).
- Phonon Anderson localization achieved down to 0.6 THz, stronger than in random systems.
- Thermal conductivity reduced by up to 60% due to suppressed phonon transport.
- Transition from ballistic to diffusive phonon transport observed with spatial correlations.
Conclusions:
- Spatial correlations in Ge distribution are crucial for inducing low-frequency phonon Anderson localization.
- This approach offers a pathway to engineer thermal properties of nanostructures.
- Findings provide insights into heat transfer mechanisms in disordered low-dimensional systems.
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