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Related Concept Videos

X-ray Crystallography02:18

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The size of the unit cell and the arrangement of atoms in a crystal may be determined from measurements of the diffraction of X-rays by the crystal, termed X-ray crystallography.
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Fixed Target Serial Data Collection at Diamond Light Source
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Testing the limits: serial crystallography using unpatterned fixed targets.

Alexander Gorel1, Robert L Shoeman1, Elisabeth Hartmann1

  • 1Max Planck Institute for Medical Research, Jahnstrasse 29, 69120 Heidelberg, Germany.

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|October 13, 2025
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Summary
This summary is machine-generated.

Sheet-on-sheet (SOS) chips enable serial crystallography but can cause radiation damage. New experiments at advanced synchrotrons show damage effects vary by beamline, requiring careful data collection strategies.

Keywords:
SFXSOS chipSSXdose ratefixed targetmetalloproteinsradiation damageroom temperatureserial crystallography

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Area of Science:

  • Structural biology
  • Crystallography
  • Synchrotron radiation science

Background:

  • Sheet-on-sheet (SOS) chips are a versatile sample delivery method for serial crystallography at synchrotrons and X-ray free-electron lasers (XFELs).
  • The lack of patterned restrictions on SOS chips allows for diverse crystal sizes and environments, but can also lead to radiation damage from heat, radicals, or gas diffusion to adjacent crystals.

Purpose of the Study:

  • To evaluate the suitability of SOS chips for damage-free serial data collection at advanced synchrotron facilities (ESRF-EBS ID29 and SwissFEL Cristallina-MX).
  • To investigate radiation damage effects on microcrystals of the hemoprotein DtpAa, known for its radiation-sensitive iron-water bond.

Main Methods:

  • Serial X-ray crystallography (SSX) data collection using SOS chips on the ID29 beamline at ESRF-EBS and the Cristallina-MX station at SwissFEL.
  • Analysis of structural changes, diffraction intensities, and crystal lattice behavior at varying X-ray exposure step sizes.

Main Results:

  • No significant changes in the heme water ligand distance were observed in structures from ID29 SSX data.
  • Diffraction intensities at ID29 indicated global radiation damage (Bragg termination), while local damage to heme geometry and histidine-iron bonds was observed across all ID29 datasets.
  • Serial femtosecond crystallography (SFX) data from Cristallina-MX revealed a crystal lattice phase transition for X-ray step sizes of ≤20 µm, potentially due to heating or dehydration.

Conclusions:

  • Radiation damage, both global and local, can occur during serial data collection with SOS chips at fourth-generation synchrotrons, even with short exposures.
  • Differences in damage profiles between beamlines (ID29 vs. Cristallina-MX) highlight the need for beamline-specific optimization.
  • Crystal lattice phase transitions observed at Cristallina-MX suggest potential damage mechanisms beyond direct radiation effects.
  • Vigilance and careful experimental design are crucial to mitigate radiation damage when using SOS chips at advanced light sources.