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Updated: Jan 15, 2026

The Effect of Interfacial Chemical Bonding in TiO2-SiO2 Composites on Their Photocatalytic NOx Abatement Performance
Published on: July 4, 2017
A study of the electronic structure and mechanical stability of three TiO2/CeO2 interfaces for high-quality
Hui Ling Jia1,2, Jie Zhang1, Xin Ze Zhang1,2
1School of Mechanical Engineering, Inner Mongolia University of Sciences and Technology, Baotou 014010, P. R. China. hljia@imust.edu.cn.
Abstract:
Due to the problems of the easy agglomeration and high polishing defect rates of pure CeO2 particles, this study constructed a core-shell structured TiO2/CeO2 composite abrasive with the aim of achieving high-quality and efficient polishing. The atomic structure, electronic structure, and mechanical properties of a-TiO2(001)/CeO2(001), a-TiO2(101)/CeO2(111) and r-TiO2(110)/CeO2(111) interfaces and their interfaces containing O vacancies were studied using first principles calculations. The results indicated that the structural stability of the three TiO2/CeO2 interfaces was determined by the number and length of the Ti-O and Ce-O covalent bonds generated in the interface region. The value of adhesion work for the stable a-TiO2(001)/CeO2(001) interface and the most unstable r-TiO2(110)/CeO2(111) interface were 2.28 and 0.53 J m-2, respectively. Oxygen vacancy defects reduced the work of adhesion and ideal shear strength of the three TiO2/CeO1.94 interfaces. The fracture of Ti-O bonds in the interface region was the reason for the failure of the a-TiO2(001)/CeO2(001) and a-TiO2(101)/CeO1.94(111) interfaces, while the failure of other interfaces was mainly caused by the fracture of Ce-O bonds in the interface region. Under shear strain, the chemical activities of the r-TiO2(110)/CeO2(111) and r-TiO2(110)/CeO1.94(111) interfaces were reduced.

