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Gigapascal yield strength at 900 °C in a boron-free TiAl complex alloy having excellent room temperature formability

S S Nene1, A R Balpande1, A Dutta1

  • 1Advanced Materials Design and Processing Group, Department of Materials Engineering, Indian Institute of Technology Jodhpur, Karwar, Jodhpur, 342037, Rajasthan, India. ssnene@iitj.ac.in.

Materials Horizons
|October 15, 2025
PubMed
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