Gate-Programmable Ozone Adsorption Gradients for Reconfigurable and Low-Power Palladium Diselenide Electronics.

Area of Science:

• Materials Science
• Nanotechnology
• Electronics Engineering

Background:

• Reconfigurable two-dimensional (2D) devices offer adaptive functionality for next-generation electronics.
• Achieving nondestructive, programmable reconfiguration in 2D transistors is a significant challenge.

Purpose of the Study:

• To introduce a gate-controlled graded ozone (O3) strategy for dynamically reconfiguring palladium diselenide (PdSe2) devices.
• To demonstrate programmable logic inverters and artificial synapses using this O3-mediated approach.

Main Methods:

• Utilized a gate-controlled graded ozone (O3) adsorption strategy on PdSe2 devices.
• Performed systematic characterization to confirm nondestructive O3 adsorption and controllable hole doping via surface charge transfer.
• Integrated the reconfigured PdSe2 devices into complementary logic inverters and artificial synapses.

Main Results:

• Confirmed the nondestructive nature of O3 adsorption on PdSe2.
• Achieved controllable hole doping through surface charge transfer modulation, creating a graded doping profile.
• Demonstrated ultralow voltage operation (0.05 V) in PdSe2-based complementary inverters.
• Exhibited metaplasticity in artificial synapses with ultralow energy consumption (0.35 fJ per synaptic event).

Conclusions:

• The O3-mediated reconfiguration strategy provides a versatile platform for multifunctional 2D electronics.
• This approach enables adaptive neuromorphic computing applications.
• The demonstrated ultralow voltage and energy efficiency highlight the potential for advanced electronic devices.