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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: Jan 14, 2026

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Published on: February 27, 2017

Buried Interface Modification for High Performance and Stable Inverted Perovskite Solar Cells.

Fei Song¹, Nan Yan¹, Yang Cao¹

¹Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P.R. China.

Angewandte Chemie (International Ed. in English)

|October 17, 2025

Summary

Triphenylamine derivative (TAPC) passivates perovskite films, reducing defects and boosting solar cell performance. This interface modification enhances power conversion efficiency and stability in both rigid and flexible perovskite solar cells.

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Last Updated: Jan 14, 2026

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

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Published on: February 27, 2017

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Developing High Performance GaP/Si Heterojunction Solar Cells

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

Area of Science:

Materials Science
Solid State Physics
Photovoltaics

Background:

Residual stress in perovskite films causes lattice distortion and defects (dislocations, vacancies).
These defects act as non-radiative recombination centers, degrading perovskite film stability and device performance.
Effective passivation strategies are crucial for high-performance and stable perovskite solar cells.

Purpose of the Study:

To design an effective passivating agent to mitigate stress and defects in perovskite films.
To enhance the performance and stability of perovskite solar cells (PSCs) through interface modification.
To demonstrate the applicability of the strategy for flexible PSCs (F-PSCs).

Main Methods:

Utilized a triphenylamine derivative (TAPC) as a passivating agent for the hole transport layer (HTL).
Engineered a modified molecular layer to create a gradient in thermal expansion coefficients between the HTL and perovskite.
Fabricated and characterized optimized rigid PSCs and flexible PSCs (F-PSCs).

Main Results:

The TAPC modification effectively mitigated stress accumulation and reduced defect formation in the perovskite film.
Optimized PSCs showed a power conversion efficiency (PCE) increase from 24.22% to 26.05% and a fill factor (FF) rise from 83.2% to 85.2%.
The modified devices exhibited minimal open-circuit voltage (V_oc) loss and excellent long-term stability, with F-PSCs achieving a PCE of 24.39%.

Conclusions:

Triphenylamine derivative (TAPC) serves as an effective passivating agent for perovskite films.
Buried interface modification is a promising strategy for fabricating high-performance and stable PSCs and F-PSCs.
The developed method enhances charge transport, optimizes energy levels, and improves device stability.