Related Experiment Video
Updated: Jan 14, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Instanton Theory for Nonadiabatic Tunneling through Near-Barrier Crossings
Ziyan Ye1, Eric R Heller2, Dong H Zhang3,4
1Department of Chemistry, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, State Key Laboratory of Porous Materials for Separation and Conversion, Fudan University, Shanghai 200438, P. R. China.
None:
Many reactions in chemistry and biology involve multiple electronic states, rendering them nonadiabatic in nature. These reactions can be formally described using Fermi's golden rule (FGR) in the weak-coupling limit. Nonadiabatic instanton theory presents a semiclassical approximation to FGR which is directly applicable to molecular systems. However, there are cases where the theory has not yet been formulated. For instance, in many real-world reactions, including spin-crossover or proton-coupled electron transfer, the nonadiabatic crossing occurs near a potential-energy barrier. This scenario gives rise to competing nonadiabatic reaction pathways, some of which involve tunneling through a round-top barrier while simultaneously switching electronic states. To date, no rate theory is available for describing tunneling via these unconventional pathways. Here, we extend instanton theory to model this class of processes, which we term the "nonconvex" regime. Benchmark tests on model systems show that the rates predicted by instanton theory are in excellent agreement with quantum-mechanical FGR calculations. Furthermore, the theory offers new insights into multistep tunneling reactions and the competition between sequential and concerted nonadiabatic tunneling pathways.
More Related Videos
11:33All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
10:28Probing the Structure and Dynamics of Interfacial Water with Scanning Tunneling Microscopy and Spectroscopy
Published on: May 27, 2018
Related Concept Videos
P-N junction
Theories of Dissolution: The Danckwerts' Model and Interfacial Barrier Model
Electrostatic Boundary Conditions
The surface integral of an electric field is given by Gauss's law in integral form and is related to...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Magnetostatic Boundary Conditions