Related Experiment Video
Updated: Jan 14, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
Symmetrical Ambipolar Transport in SnO Thin-Film Transistors Enabled by Dopant-Induced Preferential Crystal
Ruohao Hong1,2, Hanzhong Liu3, Xinxin Xu2
1Institute of Semiconductors, Henan Academy of Sciences, Zhengzhou 450000, P. R. China.
Abstract:
Herein, we present a thulium (Tm) doping strategy combined with hafnium oxide passivation annealing to enhance the preferable orientation crystallinity in SnO films toward balanced hole and electron transport. The optimized ambipolar Tm-doped SnO thin-film transistors (TFTs) exhibit hole and electron mobilities of 30.1 cm2/V·s and 11.8 cm2/V·s with a turn-on voltage about 0 V, respectively. Furthermore, we fabricate complementary thin-film logic circuits using these ambipolar SnO TFTs, including inverters and NAND and NOR gates. A record gain of 474.5 (V/V) is obtained for our ambipolar SnO inverter at a supply voltage of 6 V, which is the highest value reported among all ambipolar material systems due to the matched p- and n-type behaviors of the ambipolar SnO TFTs. By expanding the understanding of ambipolar inverter behavior, this work highlights the significant potential of ambipolar SnO TFTs for future high-performance complementary thin-film circuits.
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Bipolar Junction Transistor
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
P-N junction
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

